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| Switching Diodes MA4S159 Silicon epitaxial planar type Unit : mm For switching circuits I Features * Small S-mini type 4-pin package * Two isolated elements contained in one package, allowing highdensity mounting * Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine * Short reverse recovery time trr * Small terminal capacitance, Ct 2.1 0.1 1.25 0.1 2.0 0.1 1.3 0.1 1 4 2 3 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Tj Tstg IFSM IFM Symbol VR VRM IF(AV) Rating 80 80 100 75 225 170 500 375 150 -55 to +150 C C mA mA Unit V V mA 0.7 0.1 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin) Marking Symbol: M1B Internal Connection 1 2 4 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 0.9 2 3 0.95 Conditions Min Typ Max 0.1 1.2 Unit A V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.3 0.05 1 MA4S159 IF VF 103 105 Switching Diodes IR V R 1.6 1.4 VF Ta 102 Forward current IF (mA) Reverse current IR (nA) 100C 10 25C - 20C 1 103 100C Forward voltage VF (V) Ta = 150C 104 Ta = 150C 1.2 1.0 0.8 0.6 0.4 0.2 10 mA 3 mA IF = 100 mA 102 25C 10 10-1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 105 VR = 75 V 104 1.2 Ct VR 1 000 IF(surge) tW Forward surge current IF(surge) (A) f = 1 MHz Ta = 25C Ta = 25C IF(surge) tW Terminal capacitance Ct (pF) 35 V 6V 1.0 300 100 30 10 3 1 0.3 Reverse current IR (nA) Non repetitive 0.8 103 0.6 102 0.4 10 0.2 1 -40 0 0 40 80 120 160 200 0.1 0 20 40 60 80 100 120 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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